Estimation of the temperature dependent interaction between uncharged point defects in Si-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Estimation of the temperature dependent interaction between uncharged point defects in Si

Published:2015-01 Issue:1 Volume:5 Page:017127
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kamiyama Eiji¹²,Vanhellemont Jan³^ORCID,Sueoka Koji¹

Affiliation:

1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197, Japan

2. GlobalWafers Japan Co., Ltd., 30 Soya, Hadano, Kanagawa, 257-8566, Japan

3. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000, Belgium

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/1/1.4906565.pdf?itemId=/content/aip/journal/adva/5/1/10.1063/1.4906565&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference29 articles.

1. Brother Silicon, Sister Germanium

2. The Analysis of the Defective Cells Induced by COP in a 0.3-micron-technology Node DRAM

3. Direct Observation of Crystal-Originated Particles on Czochralski-Grown Silicon Wafer Surface and Effect on Gate Oxide Reliability

4. Influence of Crystal-Originated “Particle” Microstructure on Silicon Wafers on Gate Oxide Integrity

5. Optical Absorption of Impurities and Defects in Semiconducting Crystals

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The mechanism of high electrocatalytic activity and stability of the Pt3Co alloy embedded into the lattice by Au or Rh atoms;Ionics;2023-03-22

2. Investigation of Sub-20nm 4th generation DRAM cell transistor's parasitic resistance and scalable methodology for Sub-20nm era;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Differential clustering of self-interstitials during Si crystal growth;Journal of Crystal Growth;2021-11

4. Density Functional Theory Study on Defect Behavior Related to the Bulk Lifetime of Silicon Crystals for Power Device Application;physica status solidi (a);2019-02-04

5. Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon;Journal of Crystal Growth;2017-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3