The role of dislocations as nonradiative recombination centers in InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2889444
Reference12 articles.
1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
2. Nitride-based semiconductors for blue and green light-emitting devices
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Solid phase immiscibility in GaInN
5. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
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