Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2132528
Reference20 articles.
1. Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
2. Origin ofp-type doping difficulty in ZnO: The impurity perspective
3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
4. Control of N-Impurity States in N-Doped ZnO, ZnS and ZnTe
5. Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
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