Electron effective masses in 4H SiC-Reference-Cited by-同舟云学术

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Electron effective masses in 4H SiC

Published:1995-02-27 Issue:9 Volume:66 Page:1074-1076
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Son N. T.,Chen W. M.,Kordina O.,Konstantinov A. O.,Monemar B.,Janzén E.,Hofman D. M.,Volm D.,Drechsler M.,Meyer B. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113576

Reference13 articles.

Cited by 108 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime;Materials Science in Semiconductor Processing;2024-06

2. Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC Avalanche Photodiodes;IEEE Photonics Technology Letters;2024-04-01

3. Study on the effects of anisotropic effective mass on electronic properties, magnetization and persistent current in semiconductor quantum ring with conical geometry;Physica E: Low-dimensional Systems and Nanostructures;2024-04

4. Non-destructive mapping of electrical properties of semi-insulating compound semiconductor wafers using terahertz time-domain spectroscopy;Materials Science in Semiconductor Processing;2024-02

5. Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering;Materials Today Physics;2024-02

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