Eliminating interference effects in picosecond photoinduced absorption decays: Application to intrinsic hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337263
Reference33 articles.
1. Picosecond transient photocurrents in amorphous silicon
2. Subnanosecond transient photocurrents in a-Si:H: A probe of thermalization within shallow band-tail states
3. Recombination in plasma-deposited amorphous Si:H. Luminescence decay
4. Fast nonradiative recombination in sputtereda-Si: H
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1. Ultrafast Carrier Recombination and Transient Lattice Temperature Changes in 25 nm Thin Hydrogenated Amorphous Silicon Films;ACS Applied Electronic Materials;2019-10-22
2. Retrieval of the photo-induced changes of the dielectric function of thin films in the pre-ablation regime;SPIE Proceedings;2002-09-09
3. Retrieval of the dielectric function of thin films from femtosecond pump-probe experiments;Applied Physics Letters;2002-04-15
4. Ultrafast charge recombination in undoped amorphous hydrogenated silicon;Physical Review B;1998-05-15
5. Elimination of interference effects from photoinduced-transmission decay curves of thin silicon films;Applied Optics;1995-06-01
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