Electrical and ellipsometric characterization of the removal of silicon surface damage and contamination resulting from ion beam and plasma processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341753
Reference22 articles.
1. Study of Breakdown Fields of Oxides Grown on Reactive Ion Etched Silicon Surface: Improvement of Breakdown Limits by Oxidation of the Surface
2. RIE Contamination of Etched Silicon Surfaces
3. Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of Si
4. Damage induced in Si by ion milling or reactive ion etching
5. Optical Model for the Ellipsometric Characterization of Low Energy Ion Beam Damage in Single‐Crystal Silicon
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1. Plasma etching for the compatibility of thin film metallic coatings and direct bonding of silicon pore optics;Journal of Applied Physics;2020-09-07
2. Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate;ECS Journal of Solid State Science and Technology;2015
3. Improvement of Thin Oxides Thermally Grown on the Reactive-Ion-Etched Silicon Substrates;Japanese Journal of Applied Physics;1995-05-15
4. Ion Beam Interaction with Silicon;A User's Guide to Ellipsometry;1993
5. Measuring the Thickness of Oxide on Polysilicon using Ultraviolet Ellipsometry;Journal of The Electrochemical Society;1992-06-01
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