Recovery of ion-damaged 4H-SiC under thermal and ion beam-induced ultrafast thermal spike-assisted annealing-Reference-Cited by-同舟云学术

Recovery of ion-damaged 4H-SiC under thermal and ion beam-induced ultrafast thermal spike-assisted annealing

Published:2021-10-28 Issue:16 Volume:130 Page:165901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chakravorty Anusmita¹^ORCID,Dufour Ch²,Singh Budhi¹,Jatav Hemant¹^ORCID,Umapathy G. R.¹,Kanjilal D.¹,Kabiraj D.¹^ORCID

Affiliation:

1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India

2. CIMAP, CEA/CNRS/ENSICAEN/Université de Caen, 6 Boulevard du Maréchal Juin, 14050 Caen cedex 4, France

Funder

CSIR, India

DST-INSPIRE Faculty award

Board of Research in Nuclear Sciences

Science and Engineering Research Board

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063726

Reference76 articles.

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3. See https://www1.grc.nasa.gov/research-and-engineering/silicon-carbide-electronics-and-sensors/benefits/ for information about the desirable properties and potential applications of Silicon Carbide in harsh radiation environments.

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