Switching times in electric-field-tunable GaAs/AlAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1507621
Reference12 articles.
1. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
2. Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
3. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures
4. Connection of envelope functions at semiconductor heterointerfaces. II. Mixings ofΓandXvalleys in GaAs/AlxGa1−xAs
5. Γ-X mixing effect in GaAs/AlAs superlattices and heterojunctions
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