Bit error rate investigation of spin-transfer-switched magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4756787
Reference21 articles.
1. Recent Advances in Spin Torque MRAM
2. Progress and outlook for STT-MRAM
3. Spin-transfer torque RAM technology: Review and prospect
4. Switching distributions and write reliability of perpendicular spin torque MRAM
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1. Systematic Study of Medium States in Spin-Transfer Torque Magnetoresistance Random Access Memory and Their Implication for the Bit Error Rate;IEEE Electron Device Letters;2020-04
2. A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory;IEEE Transactions on Electron Devices;2019-10
3. Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations;Journal of Magnetism and Magnetic Materials;2018-12
4. Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes;Japanese Journal of Applied Physics;2018-02-08
5. Experimental Observation of Back-Hopping With Reference Layer Flipping by High-Voltage Pulse in Perpendicular Magnetic Tunnel Junctions;IEEE Transactions on Magnetics;2016-07
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