Carrier lifetime controlled by capture into deep and shallow centers in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88994
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1. Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys: magnetic resonance studies;Semiconductor Science and Technology;2005-12-16
2. Photoluminescence transients due to donor and exciton avalanche breakdown;Journal of Luminescence;1998-03
3. Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs;Acta Physica Polonica A;1995-01
4. An optically detected cyclotron resonance study of bulk GaAs;Semiconductor Science and Technology;1994-02-01
5. Time-Dependent Photoconductivity in Semi-Insulating Gallium-Arsenide;Annalen der Physik;1990
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