Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon-Reference-Cited by-同舟云学术

Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon

Published:2019-08-12 Issue:7 Volume:115 Page:072102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peach T.¹,Stockbridge K.¹^ORCID,Li Juerong¹,Homewood K. P.²³,Lourenco M. A.²³,Chick S.¹^ORCID,Hughes M. A.¹⁴^ORCID,Murdin B. N.¹^ORCID,Clowes S. K.¹^ORCID

Affiliation:

1. Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

2. Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

3. School of Materials Science and Engineering, Hubei University, Wuhan 430062, People's Republic of China

4. Joule Physics Laboratory, School of Computing Science and Engineering, University of Salford, Salford M5 4WT, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5115835

Reference23 articles.

1. Microwave Spin Echoes from Donor Electrons in Silicon

2. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

3. Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications

4. Erratum: Atomic clock transitions in silicon-based spin qubits

5. Hyperfine Structure and Nuclear Hyperpolarization Observed in the Bound Exciton Luminescence of Bi Donors in Natural Si

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