The distribution of oxide species in the Cs∕O activation layer on InP(100) negative electron affinity photocathodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2786885
Reference24 articles.
1. Y. Sun, Ph.D. dissertation, Stanford University, 2003.
2. THICKNESS OF Cs AND Cs–O FILMS ON GaAs(Cs) AND GaAs(Cs–O) PHOTOCATHODES
3. Current status of negative electron affinity devices
4. Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
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