Application and comparison of band gap narrowing models for passivated phosphorus doped silicon surfaces
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstraße 2, 79110 Freiburg, Germany
2. Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway
Funder
Reiner Lemoine-Stiftung (Reiner Lemoine Stiftung)
Bundesministerium für Umwelt, Naturschutz, Bau und Reaktorsicherheit (BMUB)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939888
Reference27 articles.
1. On the systematic analytical solutions for minority-carrier transport in nonuniform doped semiconductors: application to solar cells
2. Influence of Degeneracy on Recombination Radiation in Germanium
3. Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters
4. N. Ashcroft and N. Mermin , Solid State Physics ( Saunders College, Philadelphia, 1976), pp. 572–573.
5. Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
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