Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates

Author:

Tang Xiao1ORCID,Lu Yi1ORCID,Lin Rongyu1,Liao Che-Hao1ORCID,Zhao Yue2ORCID,Li Kuang-Hui1ORCID,Xiao Na1,Cao Haicheng1,Babatain Wedyan1ORCID,Li Xiaohang1ORCID

Affiliation:

1. Computer, Electrical, and Mathematical Science and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900, Saudi Arabia

2. School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University 2 , Shanghai 200240, China

Abstract

In this research, β-Ga2O3/NiO heterostructures were grown directly on CeO2 buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown β-Ga2O3 and NiO thin films have a preferred out-of-plane orientation along the ⟨−201⟩ and ➎111➉ directions. This is due to the ideal epitaxial ability of the CeO2 buffer layer, which serves as a perfect template for the epitaxial growth of single-oriented NiO and β-Ga2O3 by creating a constant gradient from CeO2 (2.7 Å along ➎001➉) to NiO (2.9 Å along ➎110➉), and eventually to β-Ga2O3 (3.04 Å along ➎010➉). The Hastelloy substrates endow photodetectors with good deformability and mechanical robustness. Moreover, owing to the type-II band alignment of β-Ga2O3/NiO heterostructures, the photodetectors have a good photocurrent at zero bias under 284 nm of light illumination. In addition, the photocurrent is significantly higher than when using an analogous heterostructure (as described in some previous reports), because the β-Ga2O3 and NiO thin films are crystalized along a single orientation with fewer defects.

Funder

King Abdullah University of Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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