InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots-Reference-Cited by-同舟云学术

InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots

Published:2004-08-09 Issue:6 Volume:85 Page:1024-1026
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tatebayashi Jun,Arakawa Yasuhiko,Hatori Nobuaki,Ebe Hiroji,Sugawara Mitsuru,Sudo Hisao,Kuramata Akito

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1781741

Reference15 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

4. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

5. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

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