Structure of interfaces in amorphous silicon/silicon nitride superlattices determined byinsituoptical reflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97062
Reference11 articles.
1. Properties of amorphous semiconducting multilayer films
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4. Properties of amorphous semiconducting multilayer films
5. Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices
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1. Surface and Superlattice;Nanostructure Science and Technology;2009
2. Characterization of a Solid-Source Delivery System for Metal Organic Chemical Vapor Deposition by In-Situ Laser Reflectance;MRS Proceedings;1997
3. In situ measurements of the recombination at the crystalline silicon/amorphous silicon heterointerface by time resolved microwave conductivity measurements during low temperature annealing and silane plasma exposure;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-11
4. In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements;Applied Optics;1995-02-01
5. In situ determination of optical constants of growing hydrogenated amorphous silicon film by p‐polarized light reflectance measurement on the surface;Journal of Applied Physics;1993-06
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