Anomalous Nernst effect in epitaxially grown Fe4−xNixN films

Author:

Yin Weida12ORCID,Ito Keita13ORCID,Tsubowa Yusuke45ORCID,Tsujikawa Masahito34,Shirai Masafumi436ORCID,Takanashi Koki136ORCID

Affiliation:

1. Institute for Materials Research, Tohoku University 1 , Sendai 980-8577, Japan

2. Department of Materials Science, Graduate School of Engineering, Tohoku University 2 , Sendai 980-8579, Japan

3. Center for Spintronics Research Network, Tohoku University 3 , Sendai 980-8577, Japan

4. Research Institute of Electrical Communication, Tohoku University 4 , Sendai 980-8577, Japan

5. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University 5 , Sendai 980-8579, Japan

6. Center for Science and Innovation in Spintronics, Core Research Cluster, Tohoku University 6 , Sendai 980-8577, Japan

Abstract

Anomalous Nernst effect of epitaxial Fe4−xNixN films on MgAl2O4(001) substrates was characterized. The Ni/Fe ratio (x) in Fe4−xNixN films was changed in the range of 0 ≤ x ≤ 2.8, and the Fe4−xNixN phase started to decompose into FeNi at about x = 2.2. The anomalous Nernst coefficient (SANE) decreased with x from 1.7 to 0.6 μV/K and the Seebeck coefficient increased with x from −2.3 to 1.2 μV/K. The transverse thermoelectric conductivity (αxy) evaluated from the experimental data showed a decrease with x and the change of αxy dominated the change of SANE. The anomalous Hall conductivity and αxy of Fe4N and Fe2.8Ni1.2N were obtained by first-principles calculations, showing a significant difference from the experimental results, which might be caused by the contribution from the extrinsic mechanisms.

Funder

Japan Society for the Promotion of Science

Collaborative Research Center on Energy Materials, Institute for Materials Research, Tohoku University

Cooperative Research Project of the Research Institute of Electric Communication, Tohoku University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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