High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126483
Reference14 articles.
1. Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
2. Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser
3. A vertical cavity light emitting InGaN quantum well heterostructure
4. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
5. Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy
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