Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3213384
Reference34 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
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3. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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