Size, porosity, and surface-termination dependence of the radiative and nonradiative relaxation processes of porous silicon-Reference-Cited by-同舟云学术

Size, porosity, and surface-termination dependence of the radiative and nonradiative relaxation processes of porous silicon

Published:2020-04-30 Issue:16 Volume:127 Page:164304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arad-Vosk Neta¹,Yakov Avner¹,Sa’ar Amir¹^ORCID

Affiliation:

1. Racah Institute of Physics and the Harvey M. Kruger Family Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel

Funder

Israel Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005929

Reference70 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous Silicon

3. The structural and luminescence properties of porous silicon

4. Porous silicon: a quantum sponge structure for silicon based optoelectronics

5. Radiative exciton recombination and defect luminescence observed in single silicon nanocrystals

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3. Erratum: Size, porosity, and surface-termination dependence of the radiative and nonradiative relaxation processes of porous silicon [J. Appl. Phys. 127, 164304 (2020)];Journal of Applied Physics;2020-06-28