Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer-Reference-Cited by-同舟云学术

Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Author:

Tadaki Daisuke¹²³,Ma Teng²³,Zhang Jinyu²,Iino Shohei²,Hirano-Iwata Ayumi¹³,Kimura Yasuo³⁴,Rosenberg Richard A.⁵,Niwano Michio²³

Affiliation:

1. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579, Japan

2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

3. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan

4. Tokyo University of Technology, Hachioji, Tokyo 192-0982, Japan

5. Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA

Funder

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency (CREST, JST)

Research Institute of Electrical Communication, Tohoku University (RIEC)

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference35 articles.

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