Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2403908
Reference15 articles.
1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 46.
2. An efficient method for cleaning Ge(100) surface
3. Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces
4. Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions
5. Hydrogen passivation of germanium (100) surface using wet chemical preparation
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