Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367165
Reference15 articles.
1. Defects in single-crystal silicon induced by hydrogenation
2. Hydrogen plasma induced defects in silicon
3. Platelet defects in hydrogen implanted silicon
4. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
5. Evidence for molecular hydrogen in single crystal silicon
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3. On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies;Journal of Applied Physics;2010-07-15
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