Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1953867
Reference16 articles.
1. Terahertz radiation from a photoconducting antenna array
2. Milliwatt output levels and superquadratic bias dependence in a low‐temperature‐grown GaAs photomixer
3. Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
4. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
5. Formation of As precipitates in GaAs by ion implantation and thermal annealing
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2. THz wave emission of GaAs induced by He+ ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
3. Scalable Microstructured Photoconductive Terahertz Emitters;Journal of Infrared, Millimeter, and Terahertz Waves;2011-12-16
4. Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas;Applied Physics B;2008-12-11
5. Generation and Detection of THz Radiation With Scalable Antennas Based on GaAs Substrates With Different Carrier Lifetimes;IEEE Journal of Selected Topics in Quantum Electronics;2008-03
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