28 ps recovery time in an InGaAsP/InGaAsP multiple-quantum-well saturable absorber employing carrier sweepout
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1399032
Reference13 articles.
1. Passively mode-locked Er/sup 3+/ fiber laser using a semiconductor nonlinear mirror
2. Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
3. Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
4. Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells
5. Exciton saturation in electrically biased quantum wells
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