Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors-Reference-Cited by-同舟云学术

Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Published:1998-12-28 Issue:26 Volume:73 Page:3941-3943
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Basit Nasir Abdul,Kim Hong Koo,Blachere Jean

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122943

Reference13 articles.

1. Physics of the ferroelectric nonvolatile memory field effect transistor

2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

3. Growth and characterization of ferroelectric BaMgF4 films

4. Ferroelectric switching of a field‐effect transistor with a lithium niobate gate insulator

5. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

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