Spin Hall effect and current induced magnetic switching in antiferromagnetic IrMn-Reference-Cited by-同舟云学术

Spin Hall effect and current induced magnetic switching in antiferromagnetic IrMn

Published:2018-11 Issue:11 Volume:8 Page:115323
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Qian Lijuan¹^ORCID,Chen Wenzhe¹^ORCID,Wang Kang²,Wu Xiaoshan²^ORCID,Xiao Gang¹

Affiliation:

1. Department of Physics, Brown University, Providence, Rhode Island 02912, USA

2. Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China

Funder

Institute for Nanoelectronics Discovery and Exploration

National Key R&D Program of China

National Science Foundation

King Abdullah University of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5059386

Reference43 articles.

1. Spin Hall Effect

2. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

3. Spin Hall effects

4. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

5. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

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