Carbon and oxygen role for thermally induced microdefect formation in silicon crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91098
Reference7 articles.
1. Silicon material problems in semiconductor device technology
2. Stacking Faults in Annealed Silicon Surfaces
3. Stacking faults in (100) epitaxial silicon caused by HF and thermal oxidation and effects on p‐n junctions
4. The formation of swirl defects in silicon by agglomeration of self-interstitials
5. High Oxygen Czochralski Silicon Crystal Growth Relationship to Epitaxial Stacking Faults
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