Light‐ion bombardedp‐type In0.53Ga0.47As photoconductive detectors-Reference-Cited by-同舟云学术

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Light‐ion bombardedp‐type In0.53Ga0.47As photoconductive detectors

Published:1991-06 Issue:11 Volume:69 Page:7881-7886
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rao Mulpuri V.,Hong W‐P.,Chang G‐K.,Papanicolaou N.,Dietrich Harry B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347522

Reference13 articles.

1. High-speed photoconductive detectors using GaInAs

2. High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy

3. Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm

4. Low-noise In0.53Ga0.47As:Fe photoconductive detectors for optical communication

5. Gain and bandwidth of fast near-infrared photodetectors: A comparison of diodes, phototransistors, and photoconductive devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

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