Development of a flux-film-coated sputtering (FFC-sputtering) method for fabricating c-axis oriented AlN film-Reference-Cited by-同舟云学术

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Development of a flux-film-coated sputtering (FFC-sputtering) method for fabricating c-axis oriented AlN film

Published:2020-11-01 Issue:11 Volume:10 Page:115011
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Song Y.¹²^ORCID,Kawamura F.²^ORCID,Shimamura K.¹²^ORCID,Ohgaki T.²^ORCID,Ohashi N.²³^ORCID

Affiliation:

1. Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

2. National Institute for Materials Science, Tsukuba 305-0044, Japan

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan

Funder

Element Strategy Initiative to Form Core Center of Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025736

Reference33 articles.

1. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

2. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

3. Microstructure and influence of buffer layer on threading dislocations in (0 0 0 1) AlN/sapphire grown by hydride vapor phase epitaxy

4. Sublimation growth and characterization of bulk aluminum nitride single crystals

5. Sublimation growth of AlN bulk crystals in Ta crucibles

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1. Sn-assisted heteroepitaxy improves ZnTiN₂ photoabsorbers;Journal of Materials Chemistry A;2024

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