Zinc oxide sheet field-effect transistors-Reference-Cited by-同舟云学术

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Zinc oxide sheet field-effect transistors

Published:2015-07-20 Issue:3 Volume:107 Page:033105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dahiya A. S.¹^ORCID,Opoku C.¹,Oshman C.¹²,Poulin-Vittrant G.²,Cayrel F.¹,Tran Huu Hue L.-P.²,Alquier D.¹,Camara N.¹

Affiliation:

1. Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16 rue pierre et marie Curie, 37071 Tours, France

2. Université François Rabelais de Tours, INSA-CVL, CNRS, GREMAN UMR 7347, 3 rue de la Chocolaterie, CS 23410, 41034 BLOIS Cedex, France

Funder

European network of excellence

le studium institute for advanced studies (Orleans)

Region Centre, France, CEZNO project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927270

Reference29 articles.

1. Temperature stress on pristine ZnO nanowire field effect transistor

2. Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments

3. Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

4. Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

5. Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire

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