Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1566457
Reference15 articles.
1. Self-organized growth of quantum-dot structures
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Hole burning spectroscopy of InAs self-assembled quantum dots for memory application
4. Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm
5. Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy
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1. Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates;Microelectronics Journal;2009-03
2. Surfactant-mediated growth of InAs–GaAs superlattices and quantum dot structures grown at different temperatures;Microelectronics Journal;2009-03
3. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots;Nanotechnology;2008-10-30
4. Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing;IEEE Transactions on Nanotechnology;2007-11
5. Photoluminescence from low temperature grown InAs∕GaAs quantum dots;Applied Physics Letters;2007-03-12
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