Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells-Reference-Cited by-同舟云学术

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

Published:2017-12-14 Issue:22 Volume:122 Page:224301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Melnikov M. Yu.¹^ORCID,Dolgopolov V. T.¹,Shashkin A. A.¹,Huang S.-H.²,Liu C. W.²,Kravchenko S. V.³

Affiliation:

1. Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia

2. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan and National Nano Device Laboratories, Hsinchu 300, Taiwan

3. Physics Department, Northeastern University, Boston, Massachusetts 02115, USA

Funder

National Science Foundation

Russian Foundation for Basic Research

United States-Israel Binational Science Foundation

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4991545

Reference25 articles.

1. Magnetic Field Suppression of the Conducting Phase in Two Dimensions

2. Instability of the two-dimensional metallic phase to a parallel magnetic field

3. Spin Degree of Freedom in a Two-Dimensional Electron Liquid

4. Indication of the Ferromagnetic Instability in a Dilute Two-Dimensional Electron System

5. Magnetic-field-induced spin polarization of AlAs two-dimensional electrons

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