Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
Author:
Affiliation:
1. Microelectronics Research Center, University of Texas, Austin, Texas 78758, USA
Funder
NSF NASCENT ERC
STTR Program
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907885
Reference27 articles.
1. Optical-absorption spectra of inorganic fullerenelikeMS2(M=Mo,W)
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Valley-selective circular dichroism of monolayer molybdenum disulphide
4. MoS2 Transistors Operating at Gigahertz Frequencies
5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Cited by 75 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phonon-limited transport in two-dimensional materials: A unified approach for ab initio mobility and current calculations;Physical Review Applied;2024-05-08
2. Material processing, performance and reliability of MoS2 field effect transistor (FET) technology- A critical review;Materials Science in Semiconductor Processing;2023-06
3. Long-range electrostatic contribution to electron-phonon couplings and mobilities of two-dimensional and bulk materials;Physical Review B;2023-04-20
4. Accurate Prediction of Hall Mobilities in Two-Dimensional Materials through Gauge-Covariant Quadrupolar Contributions;Physical Review Letters;2023-04-20
5. Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling;IEEE Transactions on Electron Devices;2023-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3