Temperature dependence of the negative bias temperature instability in the framework of dispersive transport-Reference-Cited by-同舟云学术

Temperature dependence of the negative bias temperature instability in the framework of dispersive transport

Published:2005-04-04 Issue:14 Volume:86 Page:143506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kaczer B.,Arkhipov V.,Degraeve R.,Collaert N.,Groeseneken G.,Goodwin M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1897046

Reference16 articles.

1. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

2. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

3. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, in Proceedings of the International Reliab. Physics Symposium (IEEE, Piscataway, NJ, 2004), p. 273.

4. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

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