Deep‐level analysis ofn‐type GaAs1−xPxalloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360401
Reference15 articles.
1. Optical phase shift measurement of residual defects in vapor epitaxial GaAsP
2. Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP
3. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
4. The sulfur‐related trap in GaAs1−xPx
5. Electron trap behaviour in Te-doped GaAs0.6P0.4
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