Analysis of epitaxial fluoride‐semiconductor interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94510
Reference10 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
3. Summary Abstract: Epitaxial growth of BaF2 on Ge and InP
4. Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures
5. Advances in Transmission Electron Microscope Techniques Applied to Device Failure Analysis
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