Affiliation:
1. Ioffe Institute, 26 Polytechnicheskaya st., 194021 St. Petersburg, Russia
2. Tyndall National Institute, University College Cork, “Lee Maltings,” Dyke Parade, Cork, Ireland
Abstract
We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 [Formula: see text]m, quality factor [Formula: see text]) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A [Formula: see text]–10 nm, type B [Formula: see text] nm), whose emission has different decay lifetimes ([Formula: see text] ns, [Formula: see text] ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold.
Funder
Science Foundation Ireland
Subject
General Physics and Astronomy