Fabrication of high-breakdown GaN Schottky barrier diodes over deeply-etched crystal surfaces-Reference-Cited by-同舟云学术

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Fabrication of high-breakdown GaN Schottky barrier diodes over deeply-etched crystal surfaces

Published:2020-09-21 Issue:11 Volume:128 Page:115703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mo Chen¹^ORCID,Wang Li¹,Galgano Xavier¹,Zhang Yu²,Xu Jian¹^ORCID

Affiliation:

1. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5131462

Reference25 articles.

1. The development of monolithic alternating current light-emitting diode

2. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

3. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

4. Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications

5. Improved surface characteristics of $n - GaN$ epitaxial structures after reactive ion etching

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1. Observation of two different temperature-dependent behaviors of the defects in III-nitride micro-LEDs;AIP Advances;2023-04-01

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