Two‐dimensional microscopic uniformity of resistivity in semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334513
Reference14 articles.
1. Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications
2. High-purity semi-insulating GaAs material for monolithic microwave integrated circuits
3. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
4. Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements
5. One‐Dimensional Photoluminescence Distribution in Semi‐Insulating GaAs Grown by CZ and HB Methods
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2. The relationship between the resistivity of semi-insulating GaAs and MESFET properties;Materials Science and Engineering: B;1997-02
3. Carrier transport in porous silicon light‐emitting devices;Journal of Applied Physics;1996-07
4. Synchrotron topographic study of defects in liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide wafers;Journal of Crystal Growth;1993-09
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