Direct measurement of the deep defect density in thin amorphous silicon films with the ‘‘absolute’’ constant photocurrent method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360566
Reference18 articles.
1. Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous silicon
2. Density of the gap states in undoped and doped glow discharge a-Si:H
3. How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:H
4. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
5. Photothermal deflection spectroscopy of hydrogenated amorphous silicon at low energies and at low temperatures
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