Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2382669
Reference26 articles.
1. Defects in Semiconductors: Some Fatal, Some Vital
2. Optically pumped lasing of ZnO at room temperature
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4. Recent advances in ZnO materials and devices
5. Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization
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1. Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2017-06
2. Growth of c-plane ZnO on γ-LiAlO2 (100) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy;Applied Surface Science;2015-10
3. ZnO nanostructured thin films: Depositions, properties and applications—A review;Materials Express;2015-01-01
4. Microstructure of spinel islands on the sapphire surface grown by ion implantation and annealing;Micron;2014-09
5. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures;Journal of Applied Physics;2014-01-28
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