Tuning of thermally induced first-order semiconductor-to-metal transition in pulsed laser deposited VO2 epitaxial thin films
Author:
Affiliation:
1. Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504, USA
2. Geophysical Laboratory, Carnegie Institution for Science, Washington, DC 20015, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4997766
Reference42 articles.
1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
2. Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices
3. Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
4. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
5. The Field Effect and Mott Transistor Based on Vanadium Dioxide
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1. Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO2 Thin Films;Advanced Materials Interfaces;2023-12-11
2. Adsorption of gas molecules of CH4, CO and H2O on the vanadium dioxide monolayer: computational method and model;Journal of Physics: Condensed Matter;2020-11-05
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4. Reduced Transition Temperature in Al:ZnO/VO2 Based Multi-Layered Device for low Powered Smart Window Application;Scientific Reports;2020-02-04
5. Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films;Journal of Applied Physics;2019-02-28
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