Thermal stability of NDR-assisted anomalous Hall effect based magnetic device-Reference-Cited by-同舟云学术

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Thermal stability of NDR-assisted anomalous Hall effect based magnetic device

Published:2019-05-28 Issue:20 Volume:125 Page:203901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Singh Rajan¹²^ORCID,Luo Zhaochu³,Lu Ziyao¹²,Saleemi Awais Siddique¹²^ORCID,Xiong Chengyue¹²,Zhang Xiaozhong¹²⁴

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2. Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, China

3. Department of Materials, ETH Zurich, 8093 Zurich, Switzerland

4. Centre for Brain-Inspired Computing Research, Tsinghua University, Beijing 100084, China

Funder

National Key R&D Program of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5088916

Reference38 articles.

1. Anomalously temperature-dependent thermal conductivity of monolayer GaN with large deviations from the traditional 1/T law

2. Anomalous Temperature Dependence of Magnetic Anisotropy in Gradient-Composition Sputterred Thin Films

3. Analog IC Reliability in Nanometer CMOS

4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

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3. Nonvolatile Magnetic Memory Combined With AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching;IEEE Magnetics Letters;2021

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