Modification of electronic states of √3×√3-Ag structure by strained Ge/Si(111) substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159017
Reference27 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Strained silicon on SiGe: Temperature dependence of carrier effective masses
3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
4. Strain and electronic structure of Ge nanoislands on Si(111)-7×7surface
5. 4×1to7×3transition in theIn∕GexSi1−x(111)system induced by varying the substrate lattice constant
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1. Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface;Thin Solid Films;2020-09
2. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11
3. Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111);Journal of Applied Physics;2013-02-21
4. Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy;Physical Review B;2012-06-22
5. Directed assembly of one-dimensional magic cluster arrays by domain boundaries;Physical Review B;2012-05-24
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