Comment on “Control of epitaxial growth for SrBi2Ta2O9 thin films” [Appl. Phys. Lett. 72, 665 (1998)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122561
Reference3 articles.
1. Control of epitaxial growth for SrBi2Ta2O9 thin films
2. Degenerate epitaxy, coincidence epitaxy and origin of “special” boundaries in thin films
3. Structure refinement of commensurately modulated bismuth strontium tantalate, Bi2SrTa2O9
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1. Excimer laser annealing of ferroelectric SrBi<formula><inf><roman>2</roman></inf></formula>Ta<formula><inf><roman>2</roman></inf></formula>O<formula><inf><roman>9</roman></inf></formula> thin films prepared by metal organic chemical vapor deposition;SPIE Proceedings;2004-10-08
2. Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition;Applied Physics A: Materials Science & Processing;2002-04-01
3. Substrate Temperature Dependence of Phase and Orientation of Pulsed Laser Deposited Bi–La–Ti–O Thin Films;Japanese Journal of Applied Physics;2002-03-15
4. Fabrication and characterization of ferroelectric oxide thin films;Handbook of Thin Films;2002
5. Epitaxial growth of ferroelectric SrBi2Ta2O9 thin films of mixed (100) and (116) orientation on SrLaGaO4(110);Applied Physics Letters;2001-10-29
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