Three-dimensional atomic-scale mapping of Pd in Ni1−xPdxSi∕Si(100) thin films-Reference-Cited by-同舟云学术

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Three-dimensional atomic-scale mapping of Pd in Ni1−xPdxSi∕Si(100) thin films

Published:2007-09-10 Issue:11 Volume:91 Page:113106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Yeong-Cheol,Adusumilli Praneet,Lauhon Lincoln J.,Seidman David N.,Jung Soon-Yen,Lee Hi-Deok,Alvis Roger L.,Ulfig Rob M.,Olson Jesse D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2784196

Reference28 articles.

1. Studies of formation of silicides and their barrier heights to silicon

2. Silicide formation correlated with surface resistivity measurements

3. Interaction of metal layers with polycrystalline Si

4. Radioactive silicon as a marker in thin‐film silicide formation

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1. Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides;Acta Materialia;2017-05

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3. Three-dimensional nanoscale characterisation of materials by atom probe tomography;International Materials Reviews;2017-01-26

4. Atom Probe Tomography of Glasses;Modern Glass Characterization;2015-10-16

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