Additive manufacturing and characterization of AgI and AgI–Al2O3 composite electrolytes for resistive switching devices-Reference-Cited by-同舟云学术

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Additive manufacturing and characterization of AgI and AgI–Al2O3 composite electrolytes for resistive switching devices

Published:2020-07-21 Issue:3 Volume:128 Page:035103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Brownlee Benjamin J.¹,Tsui Lok-kun²^ORCID,Vempati Karthik³,Plumley John B.²³^ORCID,Iverson Brian D.¹^ORCID,Peng Thomas L.³,Garzon Fernando H.²^ORCID

Affiliation:

1. Department of Mechanical Engineering, Brigham Young University, Provo, Utah 84602, USA

2. Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA

3. Air Force Research Laboratory, Kirtland AFB, New Mexico 87117, USA

Funder

Utah State University Space Dynamics Laboratory

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0004120

Reference34 articles.

1. Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

2. Complementary resistive switches for passive nanocrossbar memories

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

5. Polyaniline-based memristive microdevice with high switching rate and endurance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (AgI)(1−x)–(Al2O3)x nanocomposite system: ionic conductivity simulations by a random variable theory;Ionics;2022-04-11

2. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence;Science and Technology of Advanced Materials;2021-05-14

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