Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540738
Reference15 articles.
1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Luminescences from localized states in InGaN epilayers
4. Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells
5. Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
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