Gradual resistive switching: Insights from inverse nonexponential decay and unified theoretical modeling-Reference-Cited by-同舟云学术

Gradual resistive switching: Insights from inverse nonexponential decay and unified theoretical modeling

Published:2019-12-09 Issue:24 Volume:115 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Zhi-Hong¹^ORCID,Cristiani G.²,Habermeier H.-U.²^ORCID,Shen B.-G.¹

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

Funder

NSFC, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5117787

Reference39 articles.

1. The missing memristor found

2. Resistive switching in transition metal oxides

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

5. Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

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